NXP USA Inc.-BFU725F,115 - Transistors - Bipolar (BJT) - RF Product Specifications and Latest Quotes

Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	2.8V
Frequency - Transition:	70GHz
Noise Figure (dB Typ @ f):	0.42dB ~ 1.1dB @ 1.5GHz ~ 12GHz
Gain:	10dB ~ 24dB
Power - Max:	136mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	300 @ 10mA, 2V
Current - Collector (Ic) (Max):	40mA
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SOT-343F
Supplier Device Package:	4-DFP

NXP USA Inc. BFU725F,115