NXP USA Inc.-BFT46,215 - Transistors - JFETs Product Specifications and Latest Quotes

FET Type:	N-Channel
Voltage - Breakdown (V(BR)GSS):	-
Drain to Source Voltage (Vdss):	25 V
Current - Drain (Idss) @ Vds (Vgs=0):	200 µA @ 10 V
Current Drain (Id) - Max:	10 mA
Voltage - Cutoff (VGS off) @ Id:	1.2 V @ 0.5 nA
Input Capacitance (Ciss) (Max) @ Vds:	5pF @ 10V
Resistance - RDS(On):	-
Power - Max:	250 mW
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23 (TO-236AB)

NXP USA Inc. BFT46,215