NXP USA Inc.-BFR520T,115 - Transistors - Bipolar (BJT) - RF Product Specifications and Latest Quotes

Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	15V
Frequency - Transition:	9GHz
Noise Figure (dB Typ @ f):	1.1dB ~ 2.1dB @ 900MHz
Gain:	-
Power - Max:	150mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	60 @ 20mA, 6V
Current - Collector (Ic) (Max):	70mA
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SC-75, SOT-416
Supplier Device Package:	SC-75

NXP USA Inc. BFR520T,115