NXP USA Inc.-BFQ67,215 - Transistors - Bipolar (BJT) - RF Product Specifications and Latest Quotes

Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	10V
Frequency - Transition:	8GHz
Noise Figure (dB Typ @ f):	1.3dB ~ 3dB @ 1GHz ~ 2GHz
Gain:	-
Power - Max:	300mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	60 @ 15mA, 5V
Current - Collector (Ic) (Max):	50mA
Operating Temperature:	175°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23 (TO-236AB)

NXP USA Inc. BFQ67,215