NXP USA Inc.-BFQ540,115 - Transistors - Bipolar (BJT) - RF Product Specifications and Latest Quotes

Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	15V
Frequency - Transition:	9GHz
Noise Figure (dB Typ @ f):	1.9dB ~ 2.4dB @ 900MHz
Gain:	-
Power - Max:	1.2W
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 40mA, 8V
Current - Collector (Ic) (Max):	120mA
Operating Temperature:	175°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-243AA
Supplier Device Package:	SOT-89-3

NXP USA Inc. BFQ540,115