NXP USA Inc.-BFQ18A,115 - Transistors - Bipolar (BJT) - RF Product Specifications and Latest Quotes

Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	18V
Frequency - Transition:	4GHz
Noise Figure (dB Typ @ f):	-
Gain:	-
Power - Max:	1W
DC Current Gain (hFE) (Min) @ Ic, Vce:	25 @ 100mA, 10V
Current - Collector (Ic) (Max):	150mA
Operating Temperature:	175°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-243AA
Supplier Device Package:	SOT-89-3

NXP USA Inc. BFQ18A,115