NXP USA Inc.-BFM520,115 - Transistors - Bipolar (BJT) - RF Product Specifications and Latest Quotes

Transistor Type:	2 NPN (Dual)
Voltage - Collector Emitter Breakdown (Max):	8V
Frequency - Transition:	9GHz
Noise Figure (dB Typ @ f):	1.2dB ~ 2.1dB @ 900MHz
Gain:	-
Power - Max:	1W
DC Current Gain (hFE) (Min) @ Ic, Vce:	60 @ 20mA, 6V
Current - Collector (Ic) (Max):	70mA
Operating Temperature:	175°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	6-TSSOP, SC-88, SOT-363
Supplier Device Package:	6-TSSOP

NXP USA Inc. BFM520,115