NXP USA Inc.-BFG505,215 - Transistors - Bipolar (BJT) - RF Product Specifications and Latest Quotes

Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	15V
Frequency - Transition:	9GHz
Noise Figure (dB Typ @ f):	1.2dB ~ 2.1dB @ 900MHz
Gain:	-
Power - Max:	150mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	60 @ 5mA, 6V
Current - Collector (Ic) (Max):	18mA
Operating Temperature:	175°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-253-4, TO-253AA
Supplier Device Package:	SOT-143B

NXP USA Inc. BFG505,215