NXP USA Inc.-BFG325W/XR,115 - Transistors - Bipolar (BJT) - RF Product Specifications and Latest Quotes

Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	6V
Frequency - Transition:	14GHz
Noise Figure (dB Typ @ f):	1.1dB @ 2GHz
Gain:	18.3dB
Power - Max:	210mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	60 @ 15mA, 3V
Current - Collector (Ic) (Max):	35mA
Operating Temperature:	175°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SC-82A, SOT-343
Supplier Device Package:	CMPAK-4

NXP USA Inc. BFG325W/XR,115