NXP USA Inc.-BFG25AW/X,115 - Transistors - Bipolar (BJT) - RF Product Specifications and Latest Quotes

Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	5V
Frequency - Transition:	5GHz
Noise Figure (dB Typ @ f):	1.9dB ~ 2dB @ 1GHz
Gain:	-
Power - Max:	500mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	50 @ 500µA, 1V
Current - Collector (Ic) (Max):	6.5mA
Operating Temperature:	175°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SOT-343 Reverse Pinning
Supplier Device Package:	4-SO

NXP USA Inc. BFG25AW/X,115