NXP USA Inc.-BFG10/X,215 - Transistors - Bipolar (BJT) - RF Product Specifications and Latest Quotes

Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	8V
Frequency - Transition:	1.9GHz
Noise Figure (dB Typ @ f):	-
Gain:	7dB
Power - Max:	400mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	25 @ 50mA, 5V
Current - Collector (Ic) (Max):	250mA
Operating Temperature:	175°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-253-4, TO-253AA
Supplier Device Package:	SOT-143B

NXP USA Inc. BFG10/X,215