NXP USA Inc.-BF370,112 - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Transistor Type:	NPN
Current - Collector (Ic) (Max):	100 mA
Voltage - Collector Emitter Breakdown (Max):	15 V
Vce Saturation (Max) @ Ib, Ic:	-
Current - Collector Cutoff (Max):	400nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	40 @ 10mA, 1V
Power - Max:	500 mW
Frequency - Transition:	500MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package:	TO-92-3

NXP USA Inc. BF370,112