NXP USA Inc.-BF240,112 - Transistors - Bipolar (BJT) - RF Product Specifications and Latest Quotes

Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	40V
Frequency - Transition:	150MHz
Noise Figure (dB Typ @ f):	-
Gain:	-
Power - Max:	300mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	67 @ 1mA, 10V
Current - Collector (Ic) (Max):	25mA
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package:	TO-92-3

NXP USA Inc. BF240,112