NXP USA Inc.-BC639,116 - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Part Number	BC639,116	BC639,126	BC635,116	BC636,116	BC638,116	BC639,112
Manufacturer	NXP USA Inc.	NXP USA Inc.	NXP USA Inc.	NXP USA Inc.	NXP USA Inc.	NXP USA Inc.
Product Status	Obsolete	Obsolete	Obsolete	Obsolete	Obsolete	Obsolete
Transistor Type	NPN	NPN	NPN	PNP	PNP	NPN
Current - Collector (Ic) (Max)	1 A	1 A	1 A	1 A	1 A	1 A
Voltage - Collector Emitter Breakdown (Max)	80 V	80 V	45 V	45 V	60 V	80 V
Vce Saturation (Max) @ Ib, Ic	500mV @ 50mA, 500mA	500mV @ 50mA, 500mA	500mV @ 50mA, 500mA	500mV @ 50mA, 500mA	500mV @ 50mA, 500mA	500mV @ 50mA, 500mA
Current - Collector Cutoff (Max)	100nA (ICBO)	100nA (ICBO)	100nA (ICBO)	100nA (ICBO)	100nA (ICBO)	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	63 @ 150mA, 2V	63 @ 150mA, 2V	63 @ 150mA, 2V	63 @ 150mA, 2V	63 @ 150mA, 2V	63 @ 150mA, 2V
Power - Max	830 mW	830 mW	830 mW	830 mW	830 mW	830 mW
Frequency - Transition	180MHz	180MHz	180MHz	145MHz	100MHz	180MHz
Operating Temperature	150°C (TJ)	150°C (TJ)	150°C (TJ)	150°C (TJ)	150°C (TJ)	150°C (TJ)
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole
Package / Case	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package	TO-92-3	TO-92-3	TO-92-3	TO-92-3	TO-92-3	TO-92-3

NXP USA Inc. BC639,116

Transistor Type:	NPN
Current - Collector (Ic) (Max):	1 A
Voltage - Collector Emitter Breakdown (Max):	80 V
Vce Saturation (Max) @ Ib, Ic:	500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	63 @ 150mA, 2V
Power - Max:	830 mW
Frequency - Transition:	180MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package:	TO-92-3