BC639,112
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NXP USA Inc. BC639,112

Manufacturer No:
BC639,112
Manufacturer:
NXP USA Inc.
Package:
Bulk
Datasheet:
BC639,112 Datasheet
ECAD Model:
-
Description:
TRANS NPN 80V 1A TO92-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):80 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:63 @ 150mA, 2V
Power - Max:830 mW
Frequency - Transition:180MHz
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package:TO-92-3
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Similar Products

Part Number BC639,112 BC639,116   BC635,112   BC638,112  
Manufacturer NXP USA Inc. NXP USA Inc. NXP USA Inc. NXP USA Inc.
Product Status Obsolete Obsolete Obsolete Obsolete
Transistor Type NPN NPN NPN PNP
Current - Collector (Ic) (Max) 1 A 1 A 1 A 1 A
Voltage - Collector Emitter Breakdown (Max) 80 V 80 V 45 V 60 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 63 @ 150mA, 2V 63 @ 150mA, 2V 63 @ 150mA, 2V 63 @ 150mA, 2V
Power - Max 830 mW 830 mW 830 mW 830 mW
Frequency - Transition 180MHz 180MHz 180MHz 100MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package TO-92-3 TO-92-3 TO-92-3 TO-92-3

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