NXP USA Inc.-BC618,112 - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Part Number	BC618,112	BC638,112
Manufacturer	NXP USA Inc.	NXP USA Inc.
Product Status	Obsolete	Obsolete
Transistor Type	NPN - Darlington	PNP
Current - Collector (Ic) (Max)	500 mA	1 A
Voltage - Collector Emitter Breakdown (Max)	55 V	60 V
Vce Saturation (Max) @ Ib, Ic	1.1V @ 200µA, 200mA	500mV @ 50mA, 500mA
Current - Collector Cutoff (Max)	50µA	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	10000 @ 200mA, 5V	63 @ 150mA, 2V
Power - Max	625 mW	830 mW
Frequency - Transition	155MHz	100MHz
Operating Temperature	150°C (TJ)	150°C (TJ)
Mounting Type	Through Hole	Through Hole
Package / Case	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package	TO-92-3	TO-92-3

NXP USA Inc. BC618,112

Transistor Type:	NPN - Darlington
Current - Collector (Ic) (Max):	500 mA
Voltage - Collector Emitter Breakdown (Max):	55 V
Vce Saturation (Max) @ Ib, Ic:	1.1V @ 200µA, 200mA
Current - Collector Cutoff (Max):	50µA
DC Current Gain (hFE) (Min) @ Ic, Vce:	10000 @ 200mA, 5V
Power - Max:	625 mW
Frequency - Transition:	155MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package:	TO-92-3