NXP USA Inc.-BC559C,116 - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Transistor Type:	PNP
Current - Collector (Ic) (Max):	100 mA
Voltage - Collector Emitter Breakdown (Max):	30 V
Vce Saturation (Max) @ Ib, Ic:	650mV @ 5mA, 100mA
Current - Collector Cutoff (Max):	15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	420 @ 2mA, 5V
Power - Max:	500 mW
Frequency - Transition:	100MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package:	TO-92-3

NXP USA Inc. BC559C,116