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Discrete Semiconductor Products
Transistors - FETs, MOSFETs - RF
A2G35S200-01SR3
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NXP USA Inc. A2G35S200-01SR3
Manufacturer No:
A2G35S200-01SR3
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Datasheet:
A2G35S200-01SR3 Datasheet
ECAD Model:
-
Description:
AIRFAST RF POWER GAN TRANSISTOR
Delivery:
Payment:
Product Attributes
Transistor Type:
GaN HEMT
Frequency:
3.4GHz ~ 3.6GHz
Gain:
16.1dB
Voltage - Test:
48 V
Current Rating (Amps):
-
Noise Figure:
-
Current - Test:
291 mA
Power - Output:
180W
Voltage - Rated:
125 V
Package / Case:
NI-400S-2S
Supplier Device Package:
NI-400S-2S
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In Stock
UnitPrice:
$180.47
Quantity:
5
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