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A2G35S200-01SR3
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NXP USA Inc. A2G35S200-01SR3

Manufacturer No:
A2G35S200-01SR3
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Datasheet:
A2G35S200-01SR3 Datasheet
ECAD Model:
-
Description:
AIRFAST RF POWER GAN TRANSISTOR
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Transistor Type:GaN HEMT
Frequency:3.4GHz ~ 3.6GHz
Gain:16.1dB
Voltage - Test:48 V
Current Rating (Amps):- 
Noise Figure:- 
Current - Test:291 mA
Power - Output:180W
Voltage - Rated:125 V
Package / Case:NI-400S-2S
Supplier Device Package:NI-400S-2S
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$180.47
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