2N7002K,215
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NXP USA Inc. 2N7002K,215

Manufacturer No:
2N7002K,215
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Datasheet:
2N7002K,215 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 60V 340MA TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:340mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:3.9Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±15V
Input Capacitance (Ciss) (Max) @ Vds:40 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):830mW (Ta)
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23 (TO-236AB)
Package / Case:TO-236-3, SC-59, SOT-23-3
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Similar Products

Part Number 2N7002K,215 2N7002P,215   2N7002T,215   2N7002,215   2N7002BK,215   2N7002CK,215   2N7002E,215   2N7002F,215  
Manufacturer NXP USA Inc. Nexperia USA Inc. NXP USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Obsolete Active Obsolete Active Active Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V 60 V 60 V 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 340mA (Ta) 360mA (Ta) 300mA (Ta) 300mA (Ta) 350mA (Ta) 300mA (Ta) 385mA (Ta) 475mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 10V 5V, 10V 10V 10V 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 3.9Ohm @ 500mA, 10V 1.6Ohm @ 500mA, 10V 5Ohm @ 500mA, 10V 5Ohm @ 500mA, 10V 1.6Ohm @ 500mA, 10V 1.6Ohm @ 500mA, 10V 3Ohm @ 500mA, 10V 2Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 2V @ 1mA 2.4V @ 250µA 2.5V @ 1mA 2.5V @ 250µA 2.1V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs - 0.8 nC @ 4.5 V - - 0.6 nC @ 4.5 V 1.3 nC @ 4.5 V 0.69 nC @ 10 V 0.69 nC @ 10 V
Vgs (Max) ±15V ±20V ±20V ±30V ±20V ±20V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 40 pF @ 10 V 50 pF @ 10 V 40 pF @ 10 V 50 pF @ 10 V 50 pF @ 10 V 55 pF @ 25 V 50 pF @ 10 V 50 pF @ 10 V
FET Feature - - - - - - - -
Power Dissipation (Max) 830mW (Ta) 350mW (Ta) 830mW (Ta) 830mW (Ta) 370mW (Ta) 350mW (Ta) 830mW (Ta) 830mW (Ta)
Operating Temperature -65°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-23 (TO-236AB) TO-236AB SOT-23 (TO-236AB) TO-236AB TO-236AB TO-236AB TO-236AB TO-236AB
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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