SI2304DS,215
  • Share:

Nexperia USA Inc. SI2304DS,215

Manufacturer No:
SI2304DS,215
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Datasheet:
SI2304DS,215 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 1.7A TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:1.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:117mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id:2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:4.6 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:195 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):830mW (Tc)
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-236AB
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

-
481

Please send RFQ , we will respond immediately.

Similar Products

Part Number SI2304DS,215 SI2302DS,215  
Manufacturer Nexperia USA Inc. NXP USA Inc.
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 20 V
Current - Continuous Drain (Id) @ 25°C 1.7A (Tc) 2.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 117mOhm @ 500mA, 10V 85mOhm @ 3.6A, 4.5V
Vgs(th) (Max) @ Id 2V @ 1mA 650mV @ 1mA (Min)
Gate Charge (Qg) (Max) @ Vgs 4.6 nC @ 10 V 10 nC @ 4.5 V
Vgs (Max) ±20V ±8V
Input Capacitance (Ciss) (Max) @ Vds 195 pF @ 10 V 230 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 830mW (Tc) 830mW (Tc)
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package TO-236AB SOT-23 (TO-236AB)
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

Related Product By Categories

FDS3170N7
FDS3170N7
Fairchild Semiconductor
MOSFET N-CH 100V 6.7A 8SO
2SK1464
2SK1464
onsemi
N-CHANNEL POWER MOSFET
SQ2362ES-T1_GE3
SQ2362ES-T1_GE3
Vishay Siliconix
MOSFET N-CH 60V 4.3A SOT23-3
IPB048N15N5ATMA1
IPB048N15N5ATMA1
Infineon Technologies
MOSFET N-CH 150V 120A TO263-3
DMP4065S-13
DMP4065S-13
Diodes Incorporated
MOSFET P-CH 40V 2.4A SOT23
APT8065BVFRG
APT8065BVFRG
Microchip Technology
MOSFET N-CH 800V 13A TO247
PH7030L,115
PH7030L,115
NXP USA Inc.
MOSFET N-CH 30V 68A LFPAK56
IRLD014
IRLD014
Vishay Siliconix
MOSFET N-CH 60V 1.7A 4DIP
IRL3714LPBF
IRL3714LPBF
Infineon Technologies
MOSFET N-CH 20V 36A TO262
IRFS4010-7PPBF
IRFS4010-7PPBF
Infineon Technologies
MOSFET N-CH 100V 190A D2PAK
IPP90R500C3XKSA1
IPP90R500C3XKSA1
Infineon Technologies
MOSFET N-CH 900V 11A TO220-3
STFILED524
STFILED524
STMicroelectronics
MOSFET N-CH 525V 4A I2PAKFP

Related Product By Brand

PMEG60T30ELP-QX
PMEG60T30ELP-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
BZX8450-C51VL
BZX8450-C51VL
Nexperia USA Inc.
BZX8450-C51/SOT23/TO-236AB
NZX33B,133
NZX33B,133
Nexperia USA Inc.
DIODE ZENER 32.9V 500MW ALF2
BZX84-B3V6,215
BZX84-B3V6,215
Nexperia USA Inc.
DIODE ZENER 3.6V 250MW TO236AB
PZU30BA,115
PZU30BA,115
Nexperia USA Inc.
DIODE ZENER 30V 320MW SOD323
PDZ2.7B-QX
PDZ2.7B-QX
Nexperia USA Inc.
TRANS PREBIAS NPN/PNP
PUMH9,165
PUMH9,165
Nexperia USA Inc.
TRANS PREBIAS 2NPN 50V 6TSSOP
BC816-25R
BC816-25R
Nexperia USA Inc.
BC816-25/SOT23/TO-236AB
74ALVT16244DGG,118
74ALVT16244DGG,118
Nexperia USA Inc.
IC BUF NON-INVERT 3.6V 48TSSOP
74HCT125PW-Q100J
74HCT125PW-Q100J
Nexperia USA Inc.
IC BUF NON-INVERT 5.5V 14TSSOP
74HC166DB,112-NEX
74HC166DB,112-NEX
Nexperia USA Inc.
PARALLEL IN SERIAL OUT, HC/UH SE
74AUP1Z04GM,132
74AUP1Z04GM,132
Nexperia USA Inc.
IC XTAL DRIVER LP 6-XSON