Nexperia USA Inc.-PXN9R0-30QLJ - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	30 V
Current - Continuous Drain (Id) @ 25°C:	11.4A (Ta), 41.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	9.1mOhm @ 11.4A, 10V
Vgs(th) (Max) @ Id:	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	20.7 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	865 pF @ 15 V
FET Feature:	-
Power Dissipation (Max):	1.9W (Ta), 26W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	MLPAK33
Package / Case:	8-PowerVDFN

Nexperia USA Inc. PXN9R0-30QLJ