PXN6R7-30QLJ
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Nexperia USA Inc. PXN6R7-30QLJ

Manufacturer No:
PXN6R7-30QLJ
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Datasheet:
PXN6R7-30QLJ Datasheet
ECAD Model:
-
Description:
PXN6R7-30QL/SOT8002/MLPAK33
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:12.7A (Ta), 62A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:6.7mOhm @ 12.7A, 10V
Vgs(th) (Max) @ Id:2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:24.8 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1150 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):1.7W (Ta), 40.3W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:MLPAK33
Package / Case:8-PowerVDFN
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Similar Products

Part Number PXN6R7-30QLJ PXP6R7-30QLJ   PXN4R7-30QLJ  
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active
FET Type N-Channel P-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 12.7A (Ta), 62A (Tc) 12.6A (Ta), 66.6A (Tc) 15A (Ta), 74A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 6.7mOhm @ 12.7A, 10V 6.7mOhm @ 12.6A, 10V 4.7mOhm @ 15.2A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA 2.5V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 24.8 nC @ 10 V 133 nC @ 10 V 46.2 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1150 pF @ 15 V 4400 pF @ 15 V 2100 pF @ 15 V
FET Feature - - -
Power Dissipation (Max) 1.7W (Ta), 40.3W (Tc) 1.8W (Ta), 50W (Tc) 1.8W (Ta), 42W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package MLPAK33 MLPAK33 MLPAK33
Package / Case 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN

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