PXN010-30QLJ
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Nexperia USA Inc. PXN010-30QLJ

Manufacturer No:
PXN010-30QLJ
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Datasheet:
PXN010-30QLJ Datasheet
ECAD Model:
-
Description:
PXN010-30QL/SOT8002/MLPAK33
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:10.3A (Ta), 28A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:10.2mOhm @ 10.3A, 10V
Vgs(th) (Max) @ Id:2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:12.3 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:580 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):1.7W (Ta), 12.5W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:MLPAK33
Package / Case:8-PowerVDFN
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Similar Products

Part Number PXN010-30QLJ PXN018-30QLJ   PXN017-30QLJ  
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 10.3A (Ta), 28A (Tc) 7.5A (Ta), 19.2A (Tc) 7.9A (Ta), 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 10.2mOhm @ 10.3A, 10V 18mOhm @ 7.5A, 10V 17.4mOhm @ 7.9A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA 2.5V @ 250µA 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12.3 nC @ 10 V 10.8 nC @ 10 V 7.7 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 580 pF @ 15 V 447 pF @ 15 V 350 pF @ 15 V
FET Feature - - -
Power Dissipation (Max) 1.7W (Ta), 12.5W (Tc) 1.7W (Ta), 10.9W (Tc) 1.7W (Ta), 10.9W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package MLPAK33 MLPAK33 MLPAK33
Package / Case 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN

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