PSMNR90-40SSHJ
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Nexperia USA Inc. PSMNR90-40SSHJ

Manufacturer No:
PSMNR90-40SSHJ
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Datasheet:
PSMNR90-40SSHJ Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 40V 375A LFPAK88
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:375A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:0.9mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:3.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:166 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:12888 pF @ 25 V
FET Feature:Schottky Diode (Body)
Power Dissipation (Max):375W (Ta)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:LFPAK88 (SOT1235)
Package / Case:SOT-1235
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Similar Products

Part Number PSMNR90-40SSHJ PSMNR70-40SSHJ  
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Obsolete Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 375A (Ta) 425A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 0.9mOhm @ 25A, 10V 0.7mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 3.6V @ 1mA 3.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 166 nC @ 10 V 202 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 12888 pF @ 25 V 15719 pF @ 25 V
FET Feature Schottky Diode (Body) Schottky Diode (Body)
Power Dissipation (Max) 375W (Ta) 375W (Ta)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package LFPAK88 (SOT1235) LFPAK88 (SOT1235)
Package / Case SOT-1235 SOT-1235

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