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| Part Number | PSMN8R5-100ESQ | PSMN8R5-100PSQ | PSMN8R5-100XSQ | PSMN8R5-108ESQ | PSMN8R5-100ESFQ |
|---|---|---|---|---|---|
| Manufacturer | Nexperia USA Inc. | Nexperia USA Inc. | NXP USA Inc. | NXP USA Inc. | NXP Semiconductors |
| Product Status | Active | Active | Obsolete | Obsolete | Active |
| FET Type | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V | 100 V | 100 V | 108 V | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tj) | 100A (Tj) | 49A (Tj) | 100A (Tj) | 97A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V | 7V, 10V |
| Rds On (Max) @ Id, Vgs | 8.5mOhm @ 25A, 10V | 8.5mOhm @ 25A, 10V | 8.5mOhm @ 10A, 10V | 8.5mOhm @ 25A, 10V | 8.8mOhm @ 25A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 1mA | 4V @ 1mA | 4V @ 1mA | 4V @ 1mA | 4V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 111 nC @ 10 V | 111 nC @ 10 V | 100 nC @ 10 V | 111 nC @ 10 V | 44.5 nC @ 10 V |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 5512 pF @ 50 V | 5512 pF @ 50 V | 5512 pF @ 50 V | 5512 pF @ 50 V | 3181 pF @ 50 V |
| FET Feature | - | - | - | - | - |
| Power Dissipation (Max) | 263W (Tc) | 263W (Tc) | 55W (Tc) | 263W (Tc) | 183W (Ta) |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole | Through Hole |
| Supplier Device Package | I2PAK | TO-220AB | TO-220F | I2PAK | I2PAK |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-220-3 | TO-220-3 Full Pack, Isolated Tab | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 Long Leads, I²Pak, TO-262AA |
