PSMN7R8-120PSQ
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Nexperia USA Inc. PSMN7R8-120PSQ

Manufacturer No:
PSMN7R8-120PSQ
Manufacturer:
Nexperia USA Inc.
Package:
Bulk
Datasheet:
PSMN7R8-120PSQ Datasheet
ECAD Model:
-
Description:
NEXPERIA PSMN7R8-120PSQ - 70A, 1
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):120 V
Current - Continuous Drain (Id) @ 25°C:70A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:7.9mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:167 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:9473 pF @ 60 V
FET Feature:- 
Power Dissipation (Max):349W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I2PAK
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
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Similar Products

Part Number PSMN7R8-120PSQ PSMN7R8-120ESQ  
Manufacturer Nexperia USA Inc. NXP USA Inc.
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 120 V 120 V
Current - Continuous Drain (Id) @ 25°C 70A (Tc) 70A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 7.9mOhm @ 25A, 10V 7.9mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 167 nC @ 10 V 167 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 9473 pF @ 60 V 9473 pF @ 60 V
FET Feature - -
Power Dissipation (Max) 349W (Tc) 349W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package I2PAK I2PAK
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA

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