PSMN6R9-100YSFX
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Nexperia USA Inc. PSMN6R9-100YSFX

Manufacturer No:
PSMN6R9-100YSFX
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Datasheet:
PSMN6R9-100YSFX Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 100A LFPAK56
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:50.3 nC @ 10 V
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):238W
Operating Temperature:175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:LFPAK56, Power-SO8
Package / Case:SC-100, SOT-669
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Similar Products

Part Number PSMN6R9-100YSFX PSMN3R9-100YSFX  
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc) 120A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 7V, 10V
Rds On (Max) @ Id, Vgs - 4.3mOhm @ 25A, 10V
Vgs(th) (Max) @ Id - 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 50.3 nC @ 10 V 111 nC @ 10 V
Vgs (Max) - ±20V
Input Capacitance (Ciss) (Max) @ Vds - 7360 pF @ 50 V
FET Feature - -
Power Dissipation (Max) 238W 245W (Ta)
Operating Temperature 175°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package LFPAK56, Power-SO8 LFPAK56; Power-SO8
Package / Case SC-100, SOT-669 SOT-1023, 4-LFPAK

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