Nexperia USA Inc.-PSMN5R6-100YSFX - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	100 V
Current - Continuous Drain (Id) @ 25°C:	120A (Tj)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	-
Vgs(th) (Max) @ Id:	-
Gate Charge (Qg) (Max) @ Vgs:	63 nC @ 10 V
Vgs (Max):	-
Input Capacitance (Ciss) (Max) @ Vds:	-
FET Feature:	-
Power Dissipation (Max):	294W
Operating Temperature:	175°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	LFPAK56; Power-SO8
Package / Case:	SOT-1023, 4-LFPAK

Nexperia USA Inc. PSMN5R6-100YSFX