Nexperia USA Inc.-PSMN5R4-25YLDX - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	25 V
Current - Continuous Drain (Id) @ 25°C:	70A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	5.69mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:	2.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:	12.4 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	858 pF @ 12 V
FET Feature:	Schottky Diode (Body)
Power Dissipation (Max):	47W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	LFPAK56, Power-SO8
Package / Case:	SC-100, SOT-669

Nexperia USA Inc. PSMN5R4-25YLDX