PSMN5R2-60YLX
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Nexperia USA Inc. PSMN5R2-60YLX

Manufacturer No:
PSMN5R2-60YLX
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Datasheet:
PSMN5R2-60YLX Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 60V 100A LFPAK56
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:5.2mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:39.4 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:6319 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):195W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:LFPAK56, Power-SO8
Package / Case:SC-100, SOT-669
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Similar Products

Part Number PSMN5R2-60YLX PSMN5R6-60YLX  
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc) 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V 5V, 10V
Rds On (Max) @ Id, Vgs 5.2mOhm @ 25A, 10V 5.6mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2.1V @ 1mA 2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 39.4 nC @ 5 V 66.8 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 6319 pF @ 25 V 5026 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 195W (Tc) 167W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package LFPAK56, Power-SO8 LFPAK56, Power-SO8
Package / Case SC-100, SOT-669 SC-100, SOT-669

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