PSMN4R6-60PS,127
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Nexperia USA Inc. PSMN4R6-60PS,127

Manufacturer No:
PSMN4R6-60PS,127
Manufacturer:
Nexperia USA Inc.
Package:
Tube
Datasheet:
PSMN4R6-60PS,127 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 60V 100A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:4.6mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:70.8 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4426 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):211W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
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Similar Products

Part Number PSMN4R6-60PS,127 PSMN7R6-60PS,127  
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc) 92A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 4.6mOhm @ 25A, 10V 7.8mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 70.8 nC @ 10 V 38.7 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 4426 pF @ 30 V 2651 pF @ 30 V
FET Feature - -
Power Dissipation (Max) 211W (Tc) 149W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220AB TO-220AB
Package / Case TO-220-3 TO-220-3

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