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| Part Number | PSMN4R3-80ES,127 | PSMN4R3-80PS,127 | PSMN3R3-80ES,127 |
|---|---|---|---|
| Manufacturer | Nexperia USA Inc. | NXP Semiconductors | NXP USA Inc. |
| Product Status | Obsolete | Active | Active |
| FET Type | N-Channel | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 80 V | 80 V | 80 V |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) | 120A (Tc) | 120A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V | 10V |
| Rds On (Max) @ Id, Vgs | 4.3mOhm @ 25A, 10V | 4.3mOhm @ 25A, 10V | 3.3mOhm @ 25A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 1mA | 4V @ 1mA | 4V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 111 nC @ 10 V | 111 nC @ 10 V | 139 nC @ 10 V |
| Vgs (Max) | ±20V | ±20V | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 8161 pF @ 40 V | 8161 pF @ 40 V | 9961 pF @ 40 V |
| FET Feature | - | - | - |
| Power Dissipation (Max) | 306W (Tc) | 306W (Tc) | 338W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole | Through Hole | Through Hole |
| Supplier Device Package | I2PAK | TO-220AB | I2PAK |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-220-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
