Nexperia USA Inc.-PSMN4R3-30PL,127 - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	30 V
Current - Continuous Drain (Id) @ 25°C:	100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	4.3mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:	2.15V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:	41.5 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	2400 pF @ 12 V
FET Feature:	-
Power Dissipation (Max):	103W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	TO-220AB
Package / Case:	TO-220-3

Nexperia USA Inc. PSMN4R3-30PL,127