Nexperia USA Inc.-PSMN4R2-30MLDX - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	30 V
Current - Continuous Drain (Id) @ 25°C:	70A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	4.3mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:	2.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:	29.3 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	1795 pF @ 15 V
FET Feature:	Schottky Diode (Body)
Power Dissipation (Max):	65W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	LFPAK33
Package / Case:	SOT-1210, 8-LFPAK33 (5-Lead)

Nexperia USA Inc. PSMN4R2-30MLDX