PSMN4R1-30YLC,115
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Nexperia USA Inc. PSMN4R1-30YLC,115

Manufacturer No:
PSMN4R1-30YLC,115
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Datasheet:
PSMN4R1-30YLC,115 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 92A LFPAK56
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:92A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:4.35mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:1.95V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:23 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1502 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):67W (Tc)
Operating Temperature:- 
Mounting Type:Surface Mount
Supplier Device Package:LFPAK56, Power-SO8
Package / Case:SC-100, SOT-669
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Similar Products

Part Number PSMN4R1-30YLC,115 PSMN4R5-30YLC,115  
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 92A (Tc) 84A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 4.35mOhm @ 20A, 10V 4.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 1.95V @ 1mA 1.95V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 23 nC @ 10 V 20.5 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1502 pF @ 15 V 1324 pF @ 15 V
FET Feature - -
Power Dissipation (Max) 67W (Tc) 61W (Tc)
Operating Temperature - -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package LFPAK56, Power-SO8 LFPAK56, Power-SO8
Package / Case SC-100, SOT-669 SC-100, SOT-669

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