PSMN3R9-60PSQ
  • Share:

Nexperia USA Inc. PSMN3R9-60PSQ

Manufacturer No:
PSMN3R9-60PSQ
Manufacturer:
Nexperia USA Inc.
Package:
Tube
Datasheet:
PSMN3R9-60PSQ Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 60V 130A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:130A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:3.9mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:103 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5600 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):263W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

$3.15
20

Please send RFQ , we will respond immediately.

Similar Products

Part Number PSMN3R9-60PSQ PSMN3R9-60XSQ  
Manufacturer Nexperia USA Inc. NXP USA Inc.
Product Status Active Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 130A (Tc) 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 3.9mOhm @ 25A, 10V 4mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 103 nC @ 10 V 103 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 5600 pF @ 25 V 5494 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 263W (Tc) 55W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220AB TO-220F
Package / Case TO-220-3 TO-220-3 Full Pack, Isolated Tab

Related Product By Categories

BSC040N10NS5ATMA1
BSC040N10NS5ATMA1
Infineon Technologies
MOSFET N-CH 100V 100A TDSON
G3R30MT12J
G3R30MT12J
GeneSiC Semiconductor
SIC MOSFET N-CH 96A TO263-7
MTB16N25E
MTB16N25E
onsemi
N-CHANNEL POWER MOSFET
BSB013NE2LXIXUMA1
BSB013NE2LXIXUMA1
Infineon Technologies
MOSFET N-CH 25V 36A/163A 2WDSON
SI7149DP-T1-GE3
SI7149DP-T1-GE3
Vishay Siliconix
MOSFET P-CH 30V 50A PPAK SO-8
IRFS4410TRLPBF
IRFS4410TRLPBF
Infineon Technologies
MOSFET N-CH 100V 88A D2PAK
ZXMN6A08GQTC
ZXMN6A08GQTC
Diodes Incorporated
MOSFET N-CH 60V 3.8A SOT223
DMT10H009SK3-13
DMT10H009SK3-13
Diodes Incorporated
MOSFET BVDSS: 61V~100V TO252 T&R
APT10M19SVFRG
APT10M19SVFRG
Microchip Technology
MOSFET N-CH 100V 75A D3PAK
IXKH24N60C5
IXKH24N60C5
IXYS
MOSFET N-CH 600V 24A TO247AD
SI6443DQ-T1-GE3
SI6443DQ-T1-GE3
Vishay Siliconix
MOSFET P-CH 30V 7.3A 8TSSOP
IPD50R800CEATMA1
IPD50R800CEATMA1
Infineon Technologies
MOSFET N CH 500V 5A TO252

Related Product By Brand

PTVS12VS1UTR,115
PTVS12VS1UTR,115
Nexperia USA Inc.
TVS DIODE 12VWM 19.9VC CFP3
BZX8450-C5V1-QR
BZX8450-C5V1-QR
Nexperia USA Inc.
BZX8450-C5V1-Q/SOT23/TO-236AB
BZT52-C7V5,115
BZT52-C7V5,115
Nexperia USA Inc.
NOW NEXPERIA BZT52-C7V5 - SINGLE
BZX58550-C51-QX
BZX58550-C51-QX
Nexperia USA Inc.
BZX58550-C51-Q/SOD523/SC-79
BC847B,235
BC847B,235
Nexperia USA Inc.
TRANS NPN 45V 0.1A TO236AB
PBHV8115TLHR
PBHV8115TLHR
Nexperia USA Inc.
TRANS NPN 150V 1A TO236AB
PDTA114YQCZ
PDTA114YQCZ
Nexperia USA Inc.
PDTA114YQC/SOT8009/DFN1412D-3
BUK9Y4R8-60E,115
BUK9Y4R8-60E,115
Nexperia USA Inc.
MOSFET N-CH 60V 100A LFPAK56
74AHCT2G125DP,125
74AHCT2G125DP,125
Nexperia USA Inc.
IC BUF NON-INVERT 5.5V 8TSSOP
74LVT16244BEV,518
74LVT16244BEV,518
Nexperia USA Inc.
IC BUF NON-INVERT 3.6V 56VFBGA
74HCT377D-Q100J
74HCT377D-Q100J
Nexperia USA Inc.
IC FF D-TYPE SNGL 8BIT 20SO
NCR320UX
NCR320UX
Nexperia USA Inc.
IC LED DRVR LIN PWM 250MA 6TSOP