PSMN3R5-80ES,127
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Nexperia USA Inc. PSMN3R5-80ES,127

Manufacturer No:
PSMN3R5-80ES,127
Manufacturer:
Nexperia USA Inc.
Package:
Tube
Datasheet:
PSMN3R5-80ES,127 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 80V 120A I2PAK
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:3.5mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:139 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:9800 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):338W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I2PAK
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
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Part Number PSMN3R5-80ES,127 PSMN3R5-80PS,127   PSMN3R3-80ES,127  
Manufacturer Nexperia USA Inc. Nexperia USA Inc. NXP USA Inc.
Product Status Obsolete Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V 80 V 80 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc) 120A (Tc) 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 3.5mOhm @ 25A, 10V 3.5mOhm @ 25A, 10V 3.3mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA 4V @ 1mA 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 139 nC @ 10 V 139 nC @ 10 V 139 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 9800 pF @ 30 V 9961 pF @ 40 V 9961 pF @ 40 V
FET Feature - - -
Power Dissipation (Max) 338W (Tc) 338W (Tc) 338W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package I2PAK TO-220AB I2PAK
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA TO-220-3 TO-262-3 Long Leads, I²Pak, TO-262AA

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