PSMN3R4-30BLE,118
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Nexperia USA Inc. PSMN3R4-30BLE,118

Manufacturer No:
PSMN3R4-30BLE,118
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Datasheet:
PSMN3R4-30BLE,118 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 120A D2PAK
Delivery:
Payment:
iso14001
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iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:3.4mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:2.15V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:81 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4682 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):178W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Similar Products

Part Number PSMN3R4-30BLE,118 PSMN3R4-30BL,118  
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc) 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 3.4mOhm @ 25A, 10V 3.3mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2.15V @ 1mA 2.15V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 81 nC @ 10 V 64 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 4682 pF @ 15 V 3907 pF @ 15 V
FET Feature - -
Power Dissipation (Max) 178W (Tc) 114W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package D2PAK D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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