PSMN3R4-30BL,118
  • Share:

Nexperia USA Inc. PSMN3R4-30BL,118

Manufacturer No:
PSMN3R4-30BL,118
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Datasheet:
PSMN3R4-30BL,118 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 100A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:3.3mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:2.15V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:64 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3907 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):114W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0 Remaining View Similar

In Stock

$1.58
566

Please send RFQ , we will respond immediately.

Similar Products

Part Number PSMN3R4-30BL,118 PSMN3R4-30BLE,118  
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Obsolete Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc) 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 3.3mOhm @ 25A, 10V 3.4mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2.15V @ 1mA 2.15V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 64 nC @ 10 V 81 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3907 pF @ 15 V 4682 pF @ 15 V
FET Feature - -
Power Dissipation (Max) 114W (Tc) 178W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package D2PAK D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Related Product By Categories

STP11NM65N
STP11NM65N
STMicroelectronics
MOSFET N-CH 650V 11A TO-220
SI4463BDY-T1-E3
SI4463BDY-T1-E3
Vishay Siliconix
MOSFET P-CH 20V 9.8A 8SO
SI2319DDS-T1-GE3
SI2319DDS-T1-GE3
Vishay Siliconix
MOSFET P-CH 40V 2.7A/3.6A SOT23
SQJA16EP-T1_GE3
SQJA16EP-T1_GE3
Vishay Siliconix
AUTOMOTIVE N-CHANNEL 60 V (D-S)
IPP60R099CPAAKSA1
IPP60R099CPAAKSA1
Infineon Technologies
MOSFET N-CH 600V 31A TO220-3
IRFR024NTRRPBF
IRFR024NTRRPBF
Infineon Technologies
MOSFET N-CH 55V 17A DPAK
IPI90R500C3XKSA1
IPI90R500C3XKSA1
Infineon Technologies
MOSFET N-CH 900V 11A TO262-3
IPP50N10S3L16AKSA1
IPP50N10S3L16AKSA1
Infineon Technologies
MOSFET N-CH 100V 50A TO220-3
SI4404DY-T1-GE3
SI4404DY-T1-GE3
Vishay Siliconix
MOSFET N-CH 30V 15A 8SO
5LP01SS-TL-H
5LP01SS-TL-H
onsemi
MOSFET P-CH 50V 70MA 3SSFP
SSM3K35MFV,L3F
SSM3K35MFV,L3F
Toshiba Semiconductor and Storage
MOSFET N-CH 20V 180MA VESM
TSM10N60CZ C0G
TSM10N60CZ C0G
Taiwan Semiconductor Corporation
MOSFET N-CH 600V 10A TO220

Related Product By Brand

PESD5V0S2BT,215
PESD5V0S2BT,215
Nexperia USA Inc.
TVS DIODE 5VWM 14VC TO236AB
BAW156VL
BAW156VL
Nexperia USA Inc.
DIODE ARRAY GP 75V 160MA SOT23
BZX84J-B5V6,115
BZX84J-B5V6,115
Nexperia USA Inc.
DIODE ZENER 5.6V 550MW SOD323F
BC807-16,215
BC807-16,215
Nexperia USA Inc.
TRANS PNP 45V 0.5A TO236AB
PDTB143EUX
PDTB143EUX
Nexperia USA Inc.
TRANS PREBIAS PNP 0.425W
PSMN7R0-100PS,127
PSMN7R0-100PS,127
Nexperia USA Inc.
MOSFET N-CH 100V 100A TO220AB
PSMN3R4-30BL,118
PSMN3R4-30BL,118
Nexperia USA Inc.
MOSFET N-CH 30V 100A D2PAK
74HC4066DB,118
74HC4066DB,118
Nexperia USA Inc.
IC SWITCH QUAD 1X2 14SSOP
74AXP2G14GXZ
74AXP2G14GXZ
Nexperia USA Inc.
74AXP2G14 - LOW-POWER DUAL SCHMI
74AHC1G86GW-Q100,1
74AHC1G86GW-Q100,1
Nexperia USA Inc.
IC GATE XOR 1CH 2-INP 5TSSOP
74LVC2G14GM,132
74LVC2G14GM,132
Nexperia USA Inc.
IC INVERT SCHMITT 2CH 2-IN 6XSON
74HC151PW-Q100,118
74HC151PW-Q100,118
Nexperia USA Inc.
IC MULTIPLEXER 1 X 8:1 16TSSOP