Nexperia USA Inc.-PSMN2R0-55YLHX - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	55 V
Current - Continuous Drain (Id) @ 25°C:	200A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	2.1mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:	2.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:	184 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	11353 pF @ 27 V
FET Feature:	-
Power Dissipation (Max):	333W (Ta)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	LFPAK56, Power-SO8
Package / Case:	SOT-1023, 4-LFPAK

Nexperia USA Inc. PSMN2R0-55YLHX