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Discrete Semiconductor Products
Transistors - FETs, MOSFETs - Single
PSMN2R0-55YLHX
PSMN2R0-55YLHX Image
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Nexperia USA Inc. PSMN2R0-55YLHX
Manufacturer No:
PSMN2R0-55YLHX
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Datasheet:
PSMN2R0-55YLHX Datasheet
ECAD Model:
-
Description:
PSMN2R0-55YLH/SOT1023/4 LEADS
Delivery:
Payment:
Product Attributes
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
55 V
Current - Continuous Drain (Id) @ 25°C:
200A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
2.1mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:
2.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
184 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
11353 pF @ 27 V
FET Feature:
-
Power Dissipation (Max):
333W (Ta)
Operating Temperature:
-55°C ~ 175°C (TJ)
Mounting Type:
Surface Mount
Supplier Device Package:
LFPAK56, Power-SO8
Package / Case:
SOT-1023, 4-LFPAK
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UnitPrice:
$4.24
Quantity:
2
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