PSMN2R0-30BL,118
  • Share:

Nexperia USA Inc. PSMN2R0-30BL,118

Manufacturer No:
PSMN2R0-30BL,118
Manufacturer:
Nexperia USA Inc.
Package:
Cut Tape (CT)
Datasheet:
PSMN2R0-30BL,118 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 100A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:2.1mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:2.15V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:117 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:6810 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):211W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0 Remaining View Similar

In Stock

$0.83
211

Please send RFQ , we will respond immediately.

Similar Products

Part Number PSMN2R0-30BL,118 PSMN2R7-30BL,118  
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Obsolete Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc) 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 2.1mOhm @ 25A, 10V 3mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2.15V @ 1mA 2.15V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 117 nC @ 10 V 66 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 6810 pF @ 15 V 3954 pF @ 15 V
FET Feature - -
Power Dissipation (Max) 211W (Tc) 170W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package D2PAK D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Related Product By Categories

VN0104N3-G
VN0104N3-G
Microchip Technology
MOSFET N-CH 40V 350MA TO92-3
TP65H480G4JSG-TR
TP65H480G4JSG-TR
Transphorm
GANFET N-CH 650V 3.6A 3PQFN
STL16N60M6
STL16N60M6
STMicroelectronics
MOSFET N-CH 600V POWERFLAT HV
IPD70P04P4L08ATMA2
IPD70P04P4L08ATMA2
Infineon Technologies
MOSFET P-CH 40V 70A TO252-3
IPD90N06S4L03ATMA2
IPD90N06S4L03ATMA2
Infineon Technologies
MOSFET N-CH 60V 90A TO252-31
GA10SICP12-263
GA10SICP12-263
GeneSiC Semiconductor
TRANS SJT 1200V 25A D2PAK
IRLR120NTRR
IRLR120NTRR
Infineon Technologies
MOSFET N-CH 100V 10A DPAK
IRLR7833TRR
IRLR7833TRR
Infineon Technologies
MOSFET N-CH 30V 140A DPAK
SPB100N03S2-03 G
SPB100N03S2-03 G
Infineon Technologies
MOSFET N-CH 30V 100A TO263-3
IRF8707PBF
IRF8707PBF
Infineon Technologies
MOSFET N-CH 30V 11A 8SO
AOU2N60A
AOU2N60A
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 600V 2A TO251-3
PHU101NQ03LT,127
PHU101NQ03LT,127
NXP USA Inc.
MOSFET N-CH 30V 75A IPAK

Related Product By Brand

PMEG3010AESBYL
PMEG3010AESBYL
Nexperia USA Inc.
DIODE SCHOTTKY 30V 1A SOD993
BZT52-B10X
BZT52-B10X
Nexperia USA Inc.
DIODE ZENER 10V 590MW SOD123
MM3Z12VT1GX
MM3Z12VT1GX
Nexperia USA Inc.
VOLTAGE REGULATOR DIODES
BZX84-B3V0,235
BZX84-B3V0,235
Nexperia USA Inc.
DIODE ZENER 3V 250MW TO236AB
PBSS5160PAP,115
PBSS5160PAP,115
Nexperia USA Inc.
TRANS 2PNP 60V 1A 6HUSON
PBSS304NX,115
PBSS304NX,115
Nexperia USA Inc.
TRANS NPN 60V 4.7A SOT89
PDTC124ET,235
PDTC124ET,235
Nexperia USA Inc.
TRANS PREBIAS NPN 50V TO236AB
BUK9M24-40EX
BUK9M24-40EX
Nexperia USA Inc.
MOSFET N-CH 40V 30A LFPAK33
74HC30D,653
74HC30D,653
Nexperia USA Inc.
IC GATE NAND 1CH 8-INP 14SO
74LV1T08GWH
74LV1T08GWH
Nexperia USA Inc.
IC GATE AND 1CH 2-INP 5TSSOP
74LV1T00GXH
74LV1T00GXH
Nexperia USA Inc.
IC GATE NAND 1CH 2-INP 5X2SON
74HCT157DB,112
74HCT157DB,112
Nexperia USA Inc.
IC MULTIPLEXER 4 X 2:1 16SSOP