PSMN1R9-40YSDX
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Nexperia USA Inc. PSMN1R9-40YSDX

Manufacturer No:
PSMN1R9-40YSDX
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Datasheet:
PSMN1R9-40YSDX Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 40V 200A LFPAK56
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:200A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.9mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:3.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:80 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:6198 pF @ 20 V
FET Feature:Schottky Diode (Body)
Power Dissipation (Max):194W (Ta)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:LFPAK56, Power-SO8
Package / Case:SC-100, SOT-669
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Similar Products

Part Number PSMN1R9-40YSDX PSMN1R5-40YSDX  
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 200A (Ta) 240A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 1.9mOhm @ 25A, 10V 1.5mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 3.6V @ 1mA 3.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 80 nC @ 10 V 99 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 6198 pF @ 20 V 7752 pF @ 20 V
FET Feature Schottky Diode (Body) Schottky Diode (Body)
Power Dissipation (Max) 194W (Ta) 238W (Ta)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package LFPAK56, Power-SO8 LFPAK56, Power-SO8
Package / Case SC-100, SOT-669 SC-100, SOT-669

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