PSMN1R9-40YSDX
  • Share:

Nexperia USA Inc. PSMN1R9-40YSDX

Manufacturer No:
PSMN1R9-40YSDX
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Datasheet:
PSMN1R9-40YSDX Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 40V 200A LFPAK56
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:200A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.9mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:3.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:80 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:6198 pF @ 20 V
FET Feature:Schottky Diode (Body)
Power Dissipation (Max):194W (Ta)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:LFPAK56, Power-SO8
Package / Case:SC-100, SOT-669
0 Remaining View Similar

In Stock

$1.93
390

Please send RFQ , we will respond immediately.

Similar Products

Part Number PSMN1R9-40YSDX PSMN1R5-40YSDX  
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 200A (Ta) 240A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 1.9mOhm @ 25A, 10V 1.5mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 3.6V @ 1mA 3.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 80 nC @ 10 V 99 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 6198 pF @ 20 V 7752 pF @ 20 V
FET Feature Schottky Diode (Body) Schottky Diode (Body)
Power Dissipation (Max) 194W (Ta) 238W (Ta)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package LFPAK56, Power-SO8 LFPAK56, Power-SO8
Package / Case SC-100, SOT-669 SC-100, SOT-669

Related Product By Categories

BSP92PL6327
BSP92PL6327
Infineon Technologies
P-CHANNEL POWER MOSFET
FDS3572_NL
FDS3572_NL
Fairchild Semiconductor
N-CHANNEL POWER MOSFET
IXFT150N25X3HV
IXFT150N25X3HV
IXYS
MOSFET N-CH 250V 150A TO268HV
SSM3K35AFS,LF
SSM3K35AFS,LF
Toshiba Semiconductor and Storage
MOSFET N-CHANNEL 20V 250MA SSM
BUK9Y113-100E,115
BUK9Y113-100E,115
Nexperia USA Inc.
MOSFET N-CH 100V 12A LFPAK56
TK31N60X,S1F
TK31N60X,S1F
Toshiba Semiconductor and Storage
MOSFET N-CH 600V 30.8A TO247
PJC7412_R1_00001
PJC7412_R1_00001
Panjit International Inc.
30V N-CHANNEL ENHANCEMENT MODE M
AO4402G
AO4402G
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 20V 20A 8SOIC
BSF134N10NJ3GXUMA1
BSF134N10NJ3GXUMA1
Infineon Technologies
MOSFET N-CH 100V 9A/40A 2WDSON
IPW50R250CPFKSA1
IPW50R250CPFKSA1
Infineon Technologies
MOSFET N-CH 500V 13A TO247-3
IRLMS5703TRPBF
IRLMS5703TRPBF
Infineon Technologies
MOSFET P-CH 30V 2.4A MICRO6
IRFR3704ZTRPBF
IRFR3704ZTRPBF
Infineon Technologies
MOSFET N-CH 20V 60A DPAK

Related Product By Brand

BZV55-C4V3,115
BZV55-C4V3,115
Nexperia USA Inc.
DIODE ZENER 4.3V 500MW LLDS
PMBT2222A,215
PMBT2222A,215
Nexperia USA Inc.
TRANS NPN 30V 0.6A TO236AB
BC869,135
BC869,135
Nexperia USA Inc.
TRANS PNP 20V 1A SOT89
BC857BW/MIF
BC857BW/MIF
Nexperia USA Inc.
TRANS PNP 45V 0.1A SOT323
BUK763R4-30B,118
BUK763R4-30B,118
Nexperia USA Inc.
MOSFET N-CH 30V 75A D2PAK
PMPB48EP,115
PMPB48EP,115
Nexperia USA Inc.
MOSFET P-CH 30V 4.7A DFN2020MD-6
74LVC273BQ-Q100X
74LVC273BQ-Q100X
Nexperia USA Inc.
IC FF D-TYPE SNGL 8BIT 20DHVQFN
74HC595BQ-Q100,115
74HC595BQ-Q100,115
Nexperia USA Inc.
IC SHIFT REGISTER 8BIT 16DHVQFN
74HC4094DB,118
74HC4094DB,118
Nexperia USA Inc.
IC 8STAGE SHIFT/STORE BUS 16SSOP
NXB0101GMX
NXB0101GMX
Nexperia USA Inc.
NXB0101GM/SOT886/XSON6
TL431AQDBZR,215
TL431AQDBZR,215
Nexperia USA Inc.
IC VREF SHUNT ADJ 1% TO236AB
PDZ8.2BGW115
PDZ8.2BGW115
Nexperia USA Inc.
SINGLE ZENER DIODE