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| Part Number | PSMN1R8-30PL,127 | PSMN1R1-30PL,127 | PSMN1R6-30PL,127 |
|---|---|---|---|
| Manufacturer | Nexperia USA Inc. | NXP Semiconductors | Nexperia USA Inc. |
| Product Status | Active | Active | Obsolete |
| FET Type | N-Channel | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V | 30 V | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) | 120A (Tc) | 100A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 1.8mOhm @ 25A, 10V | 1.3mOhm @ 25A, 10V | 1.7mOhm @ 25A, 10V |
| Vgs(th) (Max) @ Id | 2.15V @ 1mA | 2.2V @ 1mA | 2.15V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 170 nC @ 10 V | 243 nC @ 10 V | 212 nC @ 10 V |
| Vgs (Max) | ±20V | ±20V | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 10180 pF @ 12 V | 14850 pF @ 15 V | 12493 pF @ 12 V |
| FET Feature | - | - | - |
| Power Dissipation (Max) | 270W (Tc) | 338W (Tc) | 306W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole | Through Hole | Through Hole |
| Supplier Device Package | TO-220AB | TO-220AB | TO-220AB |
| Package / Case | TO-220-3 | TO-220-3 | TO-220-3 |
