PSMN1R7-40YLDX
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Nexperia USA Inc. PSMN1R7-40YLDX

Manufacturer No:
PSMN1R7-40YLDX
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Datasheet:
PSMN1R7-40YLDX Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 40V 200A LFPAK56
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:200A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:1.8mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:2.05V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:109 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:7966 pF @ 20 V
FET Feature:Schottky Diode (Body)
Power Dissipation (Max):194W (Ta)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:LFPAK56, Power-SO8
Package / Case:SC-100, SOT-669
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Similar Products

Part Number PSMN1R7-40YLDX PSMN1R0-40YLDX   PSMN1R4-40YLDX  
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 200A (Ta) 280A (Ta) 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.8mOhm @ 25A, 10V 1.1mOhm @ 25A, 10V 1.4mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2.05V @ 1mA 2.2V @ 1mA 2.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 109 nC @ 10 V 127 nC @ 10 V 96 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 7966 pF @ 20 V 8845 pF @ 20 V 6661 pF @ 20 V
FET Feature Schottky Diode (Body) - -
Power Dissipation (Max) 194W (Ta) 198W (Tc) 238W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package LFPAK56, Power-SO8 LFPAK56, Power-SO8 LFPAK56, Power-SO8
Package / Case SC-100, SOT-669 SC-100, SOT-669 SC-100, SOT-669

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