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| Part Number | PSMN1R4-30YLDX | PSMN2R4-30YLDX | PSMN1R4-40YLDX | PSMN1R0-30YLDX | PSMN1R2-30YLDX |
|---|---|---|---|---|---|
| Manufacturer | Nexperia USA Inc. | Nexperia USA Inc. | Nexperia USA Inc. | Nexperia USA Inc. | Nexperia USA Inc. |
| Product Status | Active | Active | Active | Active | Active |
| FET Type | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V | 30 V | 40 V | 30 V | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) | 100A (Tc) | 100A (Tc) | 100A (Tc) | 100A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 1.42mOhm @ 25A, 10V | 2.4mOhm @ 25A, 10V | 1.4mOhm @ 25A, 10V | 1.02mOhm @ 25A, 10V | 1.24mOhm @ 25A, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 1mA | 2.2V @ 1mA | 2.2V @ 1mA | 2.2V @ 2mA | 2.2V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 54.8 nC @ 10 V | 31.3 nC @ 10 V | 96 nC @ 10 V | 121.35 nC @ 10 V | 68 nC @ 10 V |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 3840 pF @ 15 V | 2256 pF @ 15 V | 6661 pF @ 20 V | 8598 pF @ 15 V | 4616 pF @ 15 V |
| FET Feature | - | - | - | - | - |
| Power Dissipation (Max) | 166W (Tc) | 106W (Tc) | 238W (Tc) | 238W (Tc) | 194W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Supplier Device Package | LFPAK56, Power-SO8 | LFPAK56, Power-SO8 | LFPAK56, Power-SO8 | LFPAK56, Power-SO8 | LFPAK56, Power-SO8 |
| Package / Case | SC-100, SOT-669 | SC-100, SOT-669 | SC-100, SOT-669 | SC-100, SOT-669 | SC-100, SOT-669 |
