Nexperia USA Inc.-PSMN1R2-55SLH - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	55 V
Current - Continuous Drain (Id) @ 25°C:	330A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	1.03mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:	2.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:	395 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	25773 pF @ 27 V
FET Feature:	Schottky Diode (Isolated)
Power Dissipation (Max):	375W (Ta)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	LFPAK88 (SOT1235)
Package / Case:	SOT-1235

Nexperia USA Inc. PSMN1R2-55SLH