PSMN1R2-25YLC,115
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Nexperia USA Inc. PSMN1R2-25YLC,115

Manufacturer No:
PSMN1R2-25YLC,115
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Datasheet:
PSMN1R2-25YLC,115 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 25V 100A LFPAK56
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):25 V
Current - Continuous Drain (Id) @ 25°C:100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:1.3mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:1.95V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:66 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4173 pF @ 12 V
FET Feature:- 
Power Dissipation (Max):179W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:LFPAK56, Power-SO8
Package / Case:SC-100, SOT-669
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Similar Products

Part Number PSMN1R2-25YLC,115 PSMN2R2-25YLC,115   PSMN1R7-25YLC,115   PSMN3R2-25YLC,115   PSMN1R9-25YLC,115   PSMN1R1-25YLC,115   PSMN1R2-25YL,115  
Manufacturer Nexperia USA Inc. Nexperia USA Inc. NXP USA Inc. NXP USA Inc. NXP USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Obsolete Obsolete Obsolete Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25 V 25 V 25 V 25 V 25 V 25 V 25 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc) 100A (Tc) 100A (Tc) 100A (Tc) 100A (Tc) 100A (Tc) 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.3mOhm @ 25A, 10V 2.4mOhm @ 25A, 10V 1.9mOhm @ 25A, 10V 3.4mOhm @ 25A, 10V 2.05mOhm @ 25A, 10V 1.15mOhm @ 25A, 10V 1.2mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 1.95V @ 1mA 1.95V @ 1mA 1.95V @ 1mA 1.95V @ 1mA 1.95V @ 1mA 1.95V @ 1mA 2.15V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 66 nC @ 10 V 39 nC @ 10 V 59 nC @ 10 V 30 nC @ 10 V 57 nC @ 10 V 83 nC @ 10 V 105 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 4173 pF @ 12 V 2542 pF @ 12 V 3735 pF @ 12 V 1781 pF @ 12 V 3504 pF @ 12 V 5287 pF @ 12 V 6380 pF @ 12 V
FET Feature - - - - - - -
Power Dissipation (Max) 179W (Tc) 106W (Tc) 164W (Tc) 79W (Tc) 141W (Tc) 215W (Tc) 121W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package LFPAK56, Power-SO8 LFPAK56, Power-SO8 LFPAK56, Power-SO8 LFPAK56, Power-SO8 LFPAK56, Power-SO8 LFPAK56, Power-SO8 LFPAK56; Power-SO8
Package / Case SC-100, SOT-669 SC-100, SOT-669 SC-100, SOT-669 SC-100, SOT-669 SC-100, SOT-669 SC-100, SOT-669 SOT-1023, 4-LFPAK

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