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| Part Number | PSMN1R0-25YLDX | PSMN1R2-25YLDX | PSMN2R0-25YLDX | PSMN1R7-25YLDX |
|---|---|---|---|---|
| Manufacturer | Nexperia USA Inc. | Nexperia USA Inc. | Nexperia USA Inc. | Nexperia USA Inc. |
| Product Status | Active | Active | Active | Active |
| FET Type | N-Channel | N-Channel | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 25 V | 25 V | 25 V | 25 V |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) | 100A (Tc) | 100A (Tc) | 100A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 0.89mOhm @ 25A, 10V | 1.2mOhm @ 25A, 10V | 2.09mOhm @ 25A, 10V | 1.7mOhm @ 25A, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 1mA | 2.2V @ 1mA | 2.2V @ 1mA | 2.2V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 71.8 nC @ 10 V | 60.3 nC @ 10 V | 34.1 nC @ 10 V | 46.7 nC @ 10 V |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 5308 pF @ 12 V | 4327 pF @ 12 V | 2485 pF @ 12 V | 3415 pF @ 12 V |
| FET Feature | Schottky Diode (Body) | Schottky Diode (Body) | Schottky Diode (Body) | Schottky Diode (Body) |
| Power Dissipation (Max) | 160W (Tc) | 172W (Tc) | 115W (Tc) | 135W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Supplier Device Package | LFPAK56, Power-SO8 | LFPAK56, Power-SO8 | LFPAK56, Power-SO8 | LFPAK56, Power-SO8 |
| Package / Case | SC-100, SOT-669 | SC-100, SOT-669 | SC-100, SOT-669 | SC-100, SOT-669 |
