PSMN0R9-30YLDX
  • Share:

Nexperia USA Inc. PSMN0R9-30YLDX

Manufacturer No:
PSMN0R9-30YLDX
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Datasheet:
PSMN0R9-30YLDX Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 300A LFPAK56
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:300A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:0.87mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:2.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:109 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:7668 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):291W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:LFPAK56; Power-SO8
Package / Case:SOT-1023, 4-LFPAK
0 Remaining View Similar

In Stock

$2.54
186

Please send RFQ , we will respond immediately.

Similar Products

Part Number PSMN0R9-30YLDX PSMN0R9-30ULDX  
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 300A (Tc) 300A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 0.87mOhm @ 25A, 10V 0.87mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2.2V @ 1mA 2.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 109 nC @ 10 V 109 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 7668 pF @ 15 V 7668 pF @ 15 V
FET Feature - -
Power Dissipation (Max) 291W 227W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package LFPAK56; Power-SO8 LFPAK56, Power-SO8
Package / Case SOT-1023, 4-LFPAK SOT-1023, 4-LFPAK

Related Product By Categories

IRL2505PBF
IRL2505PBF
Infineon Technologies
MOSFET N-CH 55V 104A TO220AB
FQI17N08TU
FQI17N08TU
Fairchild Semiconductor
MOSFET N-CH 80V 16.5A I2PAK
RJK6014DPP-00#T2
RJK6014DPP-00#T2
Renesas Electronics America Inc
N-CHANNEL POWER MOSFET
FQPF45N15V2
FQPF45N15V2
onsemi
MOSFET N-CH 150V 45A TO220F
SIHG47N60AEL-GE3
SIHG47N60AEL-GE3
Vishay Siliconix
MOSFET N-CH 600V 47A TO247AC
IRFR3710ZTRPBF
IRFR3710ZTRPBF
Infineon Technologies
MOSFET N-CH 100V 42A DPAK
PSMN3R7-100BSEJ
PSMN3R7-100BSEJ
Nexperia USA Inc.
MOSFET N-CH 100V 120A D2PAK
PSMN069-100YS,115
PSMN069-100YS,115
Nexperia USA Inc.
MOSFET N-CH 100V 17A LFPAK56
PJP100P03_T0_00001
PJP100P03_T0_00001
Panjit International Inc.
30V P-CHANNEL ENHANCEMENT MODE M
IPB180N04S302ATMA1
IPB180N04S302ATMA1
Infineon Technologies
MOSFET N-CH 40V 180A TO263-7
NTD60N02R-1G
NTD60N02R-1G
onsemi
MOSFET N-CH 25V 8.5A/32A IPAK
IXFC13N50
IXFC13N50
IXYS
MOSFET N-CH 500V 12A ISOPLUS220

Related Product By Brand

PESD1IVN27-AX
PESD1IVN27-AX
Nexperia USA Inc.
TVS DIODE 27VWM 45VC SOD323
BAS70-07S,115
BAS70-07S,115
Nexperia USA Inc.
DIODE ARRAY SCHOTTKY 70V 6TSSOP
PMEG4020ER,115
PMEG4020ER,115
Nexperia USA Inc.
DIODE SCHOTTKY 40V 2A SOD123W
BZX384-C11,115
BZX384-C11,115
Nexperia USA Inc.
DIODE ZENER 11V 300MW SOD323
BZT52H-C43,115
BZT52H-C43,115
Nexperia USA Inc.
DIODE ZENER 43V 375MW SOD123F
PHPT60606PYX
PHPT60606PYX
Nexperia USA Inc.
TRANS PNP 60V 6A LFPAK56 PWRSO8
74AXP1G17GSH
74AXP1G17GSH
Nexperia USA Inc.
IC BUF NON-INVERT 2.75V 6XSON
74AUP1G386GM,115
74AUP1G386GM,115
Nexperia USA Inc.
NEXPERIA 74AUP1G386GM - XOR GATE
74AHCT86D-Q100J
74AHCT86D-Q100J
Nexperia USA Inc.
IC GATE XOR 4CH 2-INP 14SO
74AHCT123AD,112
74AHCT123AD,112
Nexperia USA Inc.
NEXPERIA 74AHCT123AD - MONOSTABL
74AHCT123APW-Q100J
74AHCT123APW-Q100J
Nexperia USA Inc.
IC MULTIVIBRATOR 5NS 16TSSOP
BAS16GW,115
BAS16GW,115
Nexperia USA Inc.
BAS16GW - HIGH-SPEED SWITCHING D