PSMN0R9-25YLC,115
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Nexperia USA Inc. PSMN0R9-25YLC,115

Manufacturer No:
PSMN0R9-25YLC,115
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Datasheet:
PSMN0R9-25YLC,115 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 25V 100A LFPAK56
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):25 V
Current - Continuous Drain (Id) @ 25°C:100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:0.99mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:1.95V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:110 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:6775 pF @ 12 V
FET Feature:- 
Power Dissipation (Max):272W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:LFPAK56, Power-SO8
Package / Case:SC-100, SOT-669
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Similar Products

Part Number PSMN0R9-25YLC,115 PSMN2R9-25YLC,115   PSMN1R9-25YLC,115  
Manufacturer Nexperia USA Inc. Nexperia USA Inc. NXP USA Inc.
Product Status Active Active Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25 V 25 V 25 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc) 100A (Tc) 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 0.99mOhm @ 25A, 10V 3.15mOhm @ 25A, 10V 2.05mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 1.95V @ 1mA 1.95V @ 1mA 1.95V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 110 nC @ 10 V 33 nC @ 10 V 57 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 6775 pF @ 12 V 2083 pF @ 12 V 3504 pF @ 12 V
FET Feature - - -
Power Dissipation (Max) 272W (Tc) 92W (Tc) 141W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package LFPAK56, Power-SO8 LFPAK56, Power-SO8 LFPAK56, Power-SO8
Package / Case SC-100, SOT-669 SC-100, SOT-669 SC-100, SOT-669

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